SSF3616
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IGSS
VGS=±20V,VDS=0V
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=7A
VGS=10V, ID=9A
VDS=15V,ID=9A
0.8
1.3
21
16
10
1.8
30
V
mΩ
mΩ
S
Drain-Source On-State Resistance
18.5
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
600
75
PF
PF
PF
VDS=15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
45
td(on)
tr
td(off)
tf
4
12
22
4
nS
nS
nS
nS
nC
nC
nC
nS
nC
Turn-on Rise Time
VDS=15V,VGS=10V,RGEN=6Ω
ID=1A
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
Trr
12
1.2
3.8
13
7
VDS=15V,ID=9A,VGS=10V
IF=9A, dI/dt=100A/µs
VGS=0V,IS=3A
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Qrr
VSD
0.7
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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