SSF3022
Feathers:
Advanced trench process technology
Ultra low Rdson, typical 16mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF3022 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF3022 is assembled
in high reliability and qualified assembly house.
Application:
Power switching application
SSF3022 TOP View (TO220)
ID =60A
BV=100V
Rdson=22mohm
Absolute Maximum Ratings
Parameter
I
D
@T
c
=25ْ C
I
DM
Continuous drain current,VGS@10V
Pulsed drain current
①
Linear derating factor
V
GS
E
AS
E
AR
T
J
T
STG
Gate-to-Source voltage
Single pulse avalanche energy
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Parameter
R
θJC
R
θJA
Junction-to-case
Junction-to-ambient
Min.
—
—
②
I
D
@T
c
=100ْC Continuous drain current,VGS@10V
P
D
@T
C
=25ْC Power dissipation
Max.
60
50
240
150
2.0
±20
240
TBD
–55 to +150
ْ
C
W
W/ْ C
V
mJ
A
Units
Thermal Resistance
Typ.
0.83
—
Max.
—
62
Units
ْ
C/W
Electrical Characteristics @TJ=25
ْ
C(unless otherwise specified)
Parameter
BV
DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
Drain-to-Source leakage current
Gate-to-Source forward leakage
2008.11.13
Min.
100
—
2.0
-
—
—
—
Typ.
—
16
3.0
58
—
—
—
Max. Units
—
22
4.0
—
1
10
100
μA
nA
V
mΩ
V
S
Test Conditions
V
GS
=0V,I
D
=250μA
V
GS
=10V,I
D
=30A
V
DS
=V
GS
,I
D
=250μA
V
DS
=5V,I
D
=30A
V
DS
=100V,V
GS
=0V
V
DS
=100V,
V
GS
=0V,T
J
=150ْC
V
GS
=20V
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Silikron Semiconductor CO.,LTD
Version : 1.0
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