SSF2816E
DESCRIPTION
The SSF2816E uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
●
V
DS
= 20V,I
D
= 7A
R
DS(ON)
< 30mΩ @ V
GS
=2.5V
R
DS(ON)
< 26mΩ @ V
GS
=3.1V
R
DS(ON)
< 23mΩ @ V
GS
=4V
R
DS(ON)
< 22mΩ @ V
GS
=4.5V
ESD Rating：2500V HBM
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
2816E
Device
SSF2816E
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
20
±12
7
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
83
℃
/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
Min
20
Typ
Max
Unit
V
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1
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v1.0
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