SSF2715
Features
■
■
Extremely high dv/dt capability
Low Gate Charge Qg results in
Simple Drive Requirement
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
V
DSS
= 500V
I
D
= 5A
R
DS(ON)
= 1.2Ω
■
■
■
■
Description
SSF2715 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
energy pulse in the avalanche, and increases packing density.
SSF2715 TOP View (TO220)
Application
■
■
■
High current, high speed switching
Lighting
Ideal for off-line power supply, adaptor, PFC
Absolute Maximum Ratings
Parameter
I
D
@Tc=25
ْ
C
I
D
@Tc=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current,V
GS
@10V
Continuous Drain Current,V
GS
@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
①
①
③
②
①
Max.
5
3
20
80
0.67
±30
120
5
8.5
4.5
–55
to +150
Units
A
W
W/
ْ
C
V
mJ
A
mJ
V/ns
ْ
C
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.56
—
62.5
ْ
C/W
Units
1
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
