SSF2301A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
VDS=-5V,ID=-4A
-0.5
-1
65
V
mΩ
S
46
80
7
Drain-Source On-State Resistance
100
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
640
180
100
PF
PF
PF
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
27
60
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-10V,ID=-1A
VGS=-4.5V,RGEN=6Ω
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Qg
Qgs
Qgd
9.6
1.5
2.4
VDS=-10V,ID=-4A,VGS=-4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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