SSF2301B
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-2.8A
-0.45
-1
V
80
110
9
100
150
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
S
Clss
Coss
Crss
1160
210
PF
PF
PF
VDS=-10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
125
td(on)
tr
td(off)
tf
13.6
8.6
27.2
17.2
147.2
69.2
12.7
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=-10V,ID=-2.8A
VGS=-4.5V,RGEN=3Ω
Turn-Off Delay Time
73.6
34.6
9.6
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=-10V,ID=-2.8A,VGS=-4.5V
VGS=0V,IS=-0.75A
Gate-Source Charge
1.1
Gate-Drain Charge
2.6
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
-1.2
-2.8
V
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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