SSF2318E
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
IDSS
IGSS
VDS=20V,VGS=0V
VGS=±4.5V,VDS=0V
VGS=±8V,VDS=0V
1
μA
uA
uA
±1
±10
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
VDS=5V,ID=6.5A
0.4
0.6
18
21
26
7
1
V
22
26
34
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
1160
200
PF
PF
PF
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
140
td(on)
tr
td(off)
tf
6.5
13
50
30
10
2.3
3
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
V
GS=5V,RGEN=3Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=6.5A,
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
http://www.silikron.com
v1.0
SILIKRON [ SILIKRON SEMICONDUCTOR CO.,LTD. ]
