BSS138
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate-Source Breakdown Voltage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn–On Rise Time
Turn-Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
V
SD
V
GS
=0V,I
S
=0.44A
1.4
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=25V,I
D
=0.22A,V
GS
=10V
V
DD
=30V,V
GS
=10V,
R
GEN
=6Ω，I
D
=0.22A
2.6
9
20
6
1.7
0.1
0.4
2.4
nC
nS
C
lss
C
oss
C
rss
V
DS
=25V,V
GS
=0V,
F=1.0MHz
30
15
6
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=1mA
V
GS
=10V, I
D
=0.22A
V
GS
=4.5V, I
D
=0.22A
V
DS
=10V,I
D
=0.22A
0.1
0.8
1.5
3.5
6
V
Ω
S
I
DSS
I
GSS
BV
GSO
V
DS
=30V,V
GS
=0V
V
DS
=50V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=0V, I
G
=±250uA
±20
100
1
10
nA
μA
uA
V
NOTES:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production testing.
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