Si3220/Si3225
Table 4. 5 V Power Supply Characteristics1
(VDD, VDD1–VDD4 = 5 V, TA = 0 to 70 °C for K/F-Grade, –40 to 85 °C for B/G-Grade)
Parameter
–V
Symbol
I –I
VDD1 VDD4
Test Condition
Min
—
Typ
1
Max
—
Unit
mA
mA
mA
V
Supply
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
DD1
DD4
Current (Si3220/Si3225)
—
20
20
—
—
—
Forward/reverse active off-hook,
ABIAS = 4 mA
—
38 +
LIM
—
mA
I
Forward/reverse active OHT
OBIAS = 4 mA
—
—
60
32
—
—
mA
mA
Ringing, V
= 45 V
,
RING
rms
2
V
= –70 V, 1 REN load
BAT
V
Supply Current
I
Sleep mode, RESET = 0
Open (high-impedance)
Active on-hook standby
—
—
—
110
110
110
—
—
—
µA
µA
µA
DD
VDD
(Si3200)
Forward/reverse active off-hook,
ABIAS = 4 mA, V = –24 V
—
110
—
µA
BAT
Forward/reverse OHT, OBIAS = 4 mA,
= –70 V
V
—
—
110
110
—
—
µA
µA
BAT
Ringing, V
= 45 V
,
RING
rms
V
= –70 V,
BAT
1 REN load
Notes:
1. All specifications are for a single channel based on measurements with both channels in the same operating state.
2. See "Ringing Power Considerations" on page 50 for current and power consumption under other operating conditions.
3. Power consumption does not include additional power required for dc loop feed. Total system power consumption must
include an additional VBAT x ILOOP term.
8
Rev. 1.0
SILICONIMAGE [ Silicon image ]
