Si3217x and Si3291x
ProSLIC® Single-Chip FXS Solution with FXO Option
Selected Electrical Specifications
Parameter
Ambient Temperature
Symbol
Test Condition
F-Grade
Min
0
Typical
25
Max
70
Unit
°C
°C
V
TA
G-Grade
–40
3.13
–15
25
85
Supply Voltage, Si3217x
Battery Voltage, Si3217x
VDD
3.3
3.47
VBAT
—
–136/–110
V
Maximum Loop Resistance
(loop + load)
RLOOP
RDO
ILOOP=18 mA, VBAT = –48 V
ILOOP < ILIM
—
—
—
2000
640
DC Differential Output
Resistance
160
Idle Channel Noise
PSRR from VDD
C-Message weighted
RX and TX, dc to 3.4 kHz
200 Hz to 1 kHz
—
—
58
53
40
8
12
—
—
—
—
dBrnC
dB
55
60
58
—
dB
Longitudinal to Metallic/PCM
Balance (forward or reverse)
1 kHz to 3.4 kHz
dB
Metallic/PCM to Longitudinal Balance
200 Hz to 3.4 kHz
dB
200 Hz to 3.4 kHz at
TIP or RING
Longitudinal Impedance
—
—
50
25
—
—
Active off-hook
200 Hz to 3.4 kHz
Longitudinal Current per Pin
DC Feed Current
mA
See Table 5,
Si3217x
V
TR = 0 V
—
—
45
mA
Data Sheet
2-Wire Return Loss
200 Hz to 3.4 kHz
300 Hz to 3.4 kHz
26
26
—
—
—
—
30
30
—
—
—
—
—
—
dB
dB
Transhybrid Balance
Thermal Resistance (QFN-42)
Thermal Resistance (SOIC-16)
Continuous Power Dissipation (QFN-42)
Continuous Power Dissipation (SOIC-16)
θJA
θJA
PD
PD
32
°C/W
°C/W
W
85
TA = 85 °C
TA = 85 °C
1.3
0.47
W
Package Information
42-Pin QFN
MM
Typ
Min
Max
0.70
0.30
A
b
0.60
0.20
0.65
0.25
D
5.00 BSC
3.40
D2
e
3.35
3.45
0.50 BSC
7.00 BSC
5.40
E
E2
E3
E4
L
5.35
1.65
3.15
0.35
0.05
5.45
1.75
3.25
0.45
0.15
1.70
3.20
0.40
L1
0.10
Min
Max
1.75
0.25
—
A
—
A1
A2
b
0.10
1.25
0.31
0.17
16-Pin SOIC
0.51
0.25
c
D
E
9.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
E1
e
L
0.40
1.27
L2
h
0.25 BSC
0.25
0°
0.50
8°
ø
ProSLIC
Copyright © 2009 by Silicon Laboratories
4.14.09
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