欢迎访问ic37.com |
会员登录 免费注册
发布采购

Si32176-B-GM 参数 Datasheet PDF下载

Si32176-B-GM图片预览
型号: Si32176-B-GM
PDF下载: 下载PDF文件 查看货源
内容描述: ProSLIC®单芯片解决方案FXS与FXO选项 [ProSLIC® Single-Chip FXS Solution with FXO Option]
分类和应用: 石英晶振
文件页数/大小: 2 页 / 91 K
品牌: SILICONIMAGE [ Silicon image ]
 浏览型号Si32176-B-GM的Datasheet PDF文件第1页  
Si3217x and Si3291x
ProSLIC® Single-Chip FXS Solution with FXO Option
Selected Electrical Specifications
Parameter
Ambient Temperature
Supply Voltage, Si3217x
Battery Voltage, Si3217x
Maximum Loop Resistance
(loop + load)
DC Differential Output
Resistance
Idle Channel Noise
PSRR from V
DD
Longitudinal to Metallic/PCM
Balance (forward or reverse)
Metallic/PCM to Longitudinal Balance
Longitudinal Impedance
Longitudinal Current per Pin
DC Feed Current
2-Wire Return Loss
Transhybrid Balance
Thermal Resistance (QFN-42)
Thermal Resistance (SOIC-16)
Continuous Power Dissipation (QFN-42)
Continuous Power Dissipation (SOIC-16)
θ
JA
θ
JA
P
D
P
D
T
A
= 85 °C
T
A
= 85 °C
See Table 5,
Si3217x
Data Sheet
Symbol
T
A
V
DD
V
BAT
R
LOOP
R
DO
I
LOOP
=18 mA, V
BAT
= –48 V
I
LOOP
< I
LIM
C-Message weighted
RX and TX, dc to 3.4 kHz
200 Hz to 1 kHz
1 kHz to 3.4 kHz
200 Hz to 3.4 kHz
200 Hz to 3.4 kHz at
TIP or RING
Active off-hook
200 Hz to 3.4 kHz
V
TR
= 0 V
200 Hz to 3.4 kHz
300 Hz to 3.4 kHz
Test Condition
F-Grade
G-Grade
Min
0
–40
3.13
–15
160
58
53
40
26
26
Typical
25
25
3.3
8
55
60
58
50
25
30
30
32
85
1.3
0.47
Max
70
85
3.47
–136/–110
2000
640
12
45
Unit
°C
°C
V
V
dBrnC
dB
dB
dB
dB
mA
mA
dB
dB
°C/W
°C/W
W
W
Package Information
42-Pin QFN
M in
A
b
D
D2
e
E
E2
E3
E4
L
L1
5.35
1.65
3.15
0.35
0.05
3.35
0.60
0.20
MM
Typ
0.65
0.25
5.00 BS C
3.40
0.50 BS C
7.00 BS C
5.40
1.70
3.20
0.40
0.10
5.45
1.75
3.25
0.45
0.15
3.45
M ax
0.70
0.30
Min
A
0.10
1.25
0.31
0.17
9.90 BSC
6.00 BSC
3.90 BSC
1.27 BSC
0.40
0.25 BSC
0.25
Max
1.75
0.25
0.51
0.25
16-Pin SOIC
A1
A2
b
c
D
E
E1
e
L
L2
h
ø
1.27
0.50
ProSLIC
Copyright © 2009 by Silicon Laboratories
Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc.
Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders
4.14.09