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EFM32ZG108F32-QFN24 参数 Datasheet PDF下载

EFM32ZG108F32-QFN24图片预览
型号: EFM32ZG108F32-QFN24
PDF下载: 下载PDF文件 查看货源
内容描述: 能源,煤气,水及智能电表 [Energy, gas, water and smart metering]
分类和应用:
文件页数/大小: 51 页 / 1151 K
品牌: SILICONIMAGE [ Silicon image ]
 浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第13页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第14页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第15页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第16页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第18页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第19页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第20页浏览型号EFM32ZG108F32-QFN24的Datasheet PDF文件第21页  
Preliminary  
...the world's most energy friendly microcontrollers  
Table 3.5. Power Management  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Unit  
VBODextthr-  
BOD threshold on  
falling external sup-  
ply voltage  
1.82  
1.62  
1.85  
1.68  
V
VBODintthr-  
BOD threshold on  
falling internally reg-  
ulated supply volt-  
age  
V
VBODextthr+  
BOD threshold on  
rising external sup-  
ply voltage  
1.85  
163  
V
tRESET  
Delay from reset  
is released until  
program execution  
starts  
Applies to Power-on Reset,  
Brown-out Reset and pin reset.  
µs  
CDECOUPLE  
Voltage regulator  
decoupling capaci-  
tor.  
X5R capacitor recommended.  
Apply between DECOUPLE pin  
and GROUND  
1
µF  
3.7 Flash  
Table 3.6. Flash  
Symbol  
Parameter  
Condition  
Min  
Typ  
Max  
Unit  
ECFLASH  
Flash erase cycles  
before failure  
20000  
cycles  
TAMB<150°C  
10000  
10  
h
RETFLASH  
Flash data retention TAMB<85°C  
TAMB<70°C  
years  
years  
µs  
20  
tW_PROG  
Word (32-bit) pro-  
gramming time  
20  
tP_ERASE  
tD_ERASE  
IERASE  
Page erase time  
Device erase time  
Erase current  
20  
40  
20.4  
40.8  
20.8 ms  
41.6 ms  
71 mA  
IWRITE  
Write current  
71 mA  
VFLASH  
Supply voltage dur-  
ing flash erase and  
write  
1.8  
3.8 V  
1Measured at 25°C  
www.silabs.com  
2013-10-09 - EFM32ZG108FXX - d0063_Rev0.60  
17  
 
 
 
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