SVD8N60T/SVD8N60F
THERMAL CHARACTERISTICS
SVD8N60F
2.6
Parameter
Symbol
RșJC
SVD8N60T
0.85
Unit
°C/W
°C/W
Thermal Resistance, Junction•to•Case
Thermal Resistance, Junction•to•Ambient
62.5
62.5
RșJA
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain •Source Breakdown Voltage
Drain•Source Leakage Current
Gate•Source Leakage Current
Gate Threshold Voltage
Static Drain• Source On State
Resistance
Symbol
BVDSS
IDSS
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
600
••
Typ.
••
Max.
••
Unit
V
••
10
µA
nA
V
IGSS
••
••
±100
4.0
VGS(th)
2.0
••
RDS(on)
VGS=10V, ID=3.5A
••
0.96
1.2
W
Input Capacitance
Ciss
Coss
Crss
••
••
••
1095
93
VDS=25V,VGS=0V,
f=1.0MHZ
pF
Output Capacitance
••
••
Reverse Transfer Capacitance
2
Turn•on Delay Time
Turn•on Rise Time
Turn•off Delay Time
Turn•off Fall Time
Total Gate Charge
td(on)
tr
••
••
••
••
••
39
29
••
••
••
••
••
VDD=300V,ID=7.0A,
RG=25W
ns
td(off)
tf
248
36
(Note 2,3)
Qg
26.8
VDS=480V,ID=7.0A,
VGS=10V
nC
Gate•Source Charge
Gate•Drain Charge
Qgs
Qgd
••
••
5.1
8.5
••
••
(Note 2,3)
SOURCE•DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Continuous Source Current
IS
Integral
Reverse
Diode
P•N••
the
••
8.0
A
Junction
in
Pulsed Source Current
ISM
••
••
28
MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
Trr
IS=8.0A,VGS=0V
IS=8.0A,VGS=0V,
dIF/dt=100A/µS
••
••
••
••
1.4
••
V
365
3.4
ns
µC
Qrr
••
1.
L=19.5mHA,SI =7.0A,VDD=50V,RG=25W,starting TJ=25°C;
2. Pulse Test: Pulse width 300ȝs,Duty cycle2%;
3. Essentially independent of operating temperature.
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
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