L
3VD324600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
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3VD324600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced
voltage-blocking capability;
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Avalanche Energy Specified;
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode;
CHIP TOPOGRAPHY
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The chips may packaged in TO-220 type and the typical
equivalent product is 4N60A;
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers;
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Die size: 3.78mm*2.78mm;
Chip Thickness: 300±20μm;
Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
600
±30
V
V
Gate-Source Voltage
Drain Current
4.0
A
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
PD
106
W
°C
°C
-55～+150
-55～+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
Min.
600
2.0
-
Typ.
Max.
-
Unit
V
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
-
-
-
4.0
1.0
V
IDSS
µA
RDS(on) VGS=10V, ID=2.0A
-
-
-
-
-
-
2.1
±100
1.4
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
IGSS
VGS=±30V, VDS=0V
IS=4.0A, VGS=0V
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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