2SB154100MA
2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
2SB154100MA is scahottky barrier diode chip
fabricated in silicon epitaxial planar technology;
Ø
Due to special schottky barrier structure, thechips
have very low reverse leakage current i(caltyp
IR=0.002mA@ Vr=100V
)
and maximum °C150
operation junction temperature;
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
Chip Topography and Dimensions
La: Chip Size: 1540mm;
Lb: Pad Size: 1340mm;
High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
ORDERING SPECIFICATIONS
Product Name
Specification
For Axial leads package
Ø
Chip Size: 15m4m0 X 1540mm;
Ø
Chip Thickness: 280±20mm;
2SB154100MAYY
ABSOLUTE MAXIMUM RATINGS
Parameters
Symbol
Ratings
Unit
Maximum Repetitive Peak Reverse Voltage
V
100
3
V
RRM
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
I
A
A
FAV
I
80
FSM
T
J
150
°C
°C
T
•40~150
STG
ELECTRICAL CHARACTERISTICS (Tamb=25ć)
Parameters
Reverse Voltage
Symbol
Test Conditions
I =0.5mA
Min.
100
••
Max.
••
Unit
V
V
BR
R
Forward Voltage
Reverse Current
V
F
I =3A
F
0.85
0.5
V
I
V =100V
R
••
mA
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2007.04.27
Http: www.silan.com.cn
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