2SB083060ML
2SB083060ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
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2SB083060ML is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
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High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
Chip Topography and Dimensions
La: Chip Size: 830mm;
Lb: Pad Size: 670mm;
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Chip Size:8m3m0 X 830mm;
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Chip Thickness: 280±20mm;
ORDERING SPECIFICATIONS
Product Name
Specification
For axial leads package
2SB083060MLYY
ABSOLUTE MAXIMUM RATINGS
Parameters
Symbol
Ratings
Unit
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
V
60
1
V
A
RRM
I
FAV
I
30
125
A
FSM
T
J
°C
°C
T
•40~125
STG
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Symbol
Test Conditions
I =1mA
Min.
Max.
Unit
V
BR
60
••
V
R
Forward Voltage
Reverse Current
V
I =1A
••
••
0.70
1
V
F
F
I
V =60V
R
mA
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2007.04.27
Http: www.silan.com.cn
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