2SB082020MAJL
2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
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2SB082020MAJL is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
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High surge capability;
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
Chip Topography and Dimensions
La: Chip Size: 830mm;
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Chip Size:8m3m0 X 830mm;
Lb: Pad Size: 750mm;
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Chip Thickness: 210±20mm;
ORDERING SPECIFICATIONS
Product Name
Specification
For Au and AlSi wire bonding
package
2SB082020MAJL
ABSOLUTE MAXIMUM RATINGS
Parameters
Symbol
Ratings
Unit
V
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
V
RRM
20
1
I
A
FAV
I
40
A
FSM
T
J
150
°C
°C
T
STG
•40~150
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Symbol
Test Conditions
IR=50ȝA
I =1A
Min.
Max.
Unit
V
BR
20
••
V
V
V
••
••
••
••
0.530
0.595
10
V
V
F1
F
Forward Voltage
Reverse Current
I =2A
F
F2
ȝA
ȝA
I
I
V =20V
R
R1
R2
V =10V
R
1
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.05.19
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