2SB075040AMLJL
2SB075040AMLJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø
2SB075040AMLJL is a schottky barrier diode
chips fabricated in silicon epitaxial planar
technology;
Ø
Ø
Ø
Ø
Ø
Low power losses, high efficiency;
Guard ring construction for transient protection;
High ESD capability;
High surge capability;
Chip Topography and Dimensions
Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
La: Chip Size: 750mm;
Lb: Pad Size: 655mm;
Ø
Chip Size:75m0m X 750mm;
Ø Chip Thickness: 210±20mm;
ORDERING SPECIFICATIONS
Product Name
Specification
For Au and AlSi wire bonding
package
2SB075040AMLJL
ABSOLUTE MAXIMUM RATINGS
Parameters
Symbol
Ratings
Unit
V
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
V
RRM
40
1
I
A
FAV
I
30
A
FSM
T
J
125
°C
°C
T
STG
•40~125
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Symbol
Test Conditions
Min.
Max.
Unit
mA
I =100
R
V
BR
40
••
V
Forward Voltage
Reverse Current
V
I =1A
••
••
0.51
30
V
F
F
mA
I
V =40V
R
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
REV:1.0
2008.04.01
Http: www.silan.com.cn
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