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2SB030070MLJY 参数 Datasheet PDF下载

2SB030070MLJY图片预览
型号: 2SB030070MLJY
PDF下载: 下载PDF文件 查看货源
内容描述: 2SB030070MLJY肖特基二极管芯片 [2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS]
分类和应用: 肖特基二极管
文件页数/大小: 1 页 / 17 K
品牌: SILAN [ SILAN MICROELECTRONICS JOINT-STOCK ]
   
2SB030070MLJY  
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS  
DESCRIPTION  
Ø
2SB030070MLJY is a schottky barrier diode chips  
fabricated in silicon epitaxial planar technology;  
Low power losses, high efficiency;  
Guard ring construction for transient protection;  
High ESD capability;  
Ø
Ø
Ø
Ø
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High surge capability;  
Chip Topography and Dimensions  
Packaged products are widely used in switching  
power suppliers, polarity protection circuits and  
other electronic circuits;  
La: Chip Size:300mm;  
Lb: Pad Size: 150mm;  
Ø
Chip Size:3m0m0 X 300mm;  
ORDERING SPECIFICATIONS  
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Chip Thickness: 155±20mm  
Product Name  
Specification  
For Au and AlSi wire bonding  
package  
2SB030070MLJY  
ABSOLUTE MAXIMUM RATINGS  
Parameters  
Symbol  
Ratings  
Unit  
V
Maximum Repetitive Peak Reverse Voltage  
Average Forward Rectified Current  
Peak Forward Surge Current@8.3ms  
Maximum Operation Junction Temperature  
Storage Temperature Range  
V
RRM  
70  
70  
1
I
mA  
A
FAV  
I
FSM  
T
J
125  
°C  
°C  
T
STG  
•40~125  
ELECTRICAL CHARACTERISTICS (Tamb=25°C)  
Parameters  
Reverse Voltage  
Symbol  
Test Conditions  
Min.  
Max.  
••  
Unit  
mA  
I =8  
R
V
BR  
70  
V
I =1.0mA  
0.40  
0.71  
0.95  
0.08  
8
F
Forward Voltage  
Reverse Current  
V
••  
••  
V
F
I =10mA  
F
I =15mA  
F
V =50V  
R
mA  
I
R
V =70V  
R
HANGZHOU SILAN MICROELECTRONICS CO.,LTD  
REV:1.0  
2007.10.15  
Http: www.silan.com.cn  
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