2KG026075YQ
2KG026075YQ SWITCHING DIODE CHIPS
DESCRIPTION
Ø
2KG026075YQ is
a
high speed switching diode chip
fabricated in planar technology.
Ø
Ø
This chip can be encapsulated as 1N4148 switching diode.
When the chip is selected glass package, the chip thickness
is 100mm, and the top electrodes material is Ag bum, pthe
back•side electrodes material is Ag.
Ø
Chip size: 0.26 X 0.26 (m2m. )
2KG026XXX CHIP TOPOGRAPHY
2KG026075YQ ELECTRICAL CHARACTERISTICS (TJ=25°C)
Characteristics Symbol Test Conditions
Forward Voltage
Min.
••
Typ. Max. Unit
I =10mA.
••
1.0
1.2
••
V
V
V
F
V
F
I =100mA.
F
0.62
100
0.9
120
Reverse Voltage
Reverse Current
Diode Capacitance
V
I =100mA.
B
BR
V =20V.
R
••
••
••
••
••
25
5
nA
mA
pF
I
R
V =75V.
R
C
f=1MHz; V =0.
1.9
4
d
R
When switched from I =10mA to
F
Reverse Recovery Time
t
V =6V; R =100W; measured at
••
••
4
ns
rr
R
L
I =1mA.
R
2KG026075YQ APPEARANCE˄Top side material is Ag ball˅
Chip Appearance Diagram
Parameter
Chip Size
Symbol
Min.
220
85
Type
••
Max.
Unit
D
C
A
B
/
240
120
160
40
mm
mm
mm
mm
mm
Chip Thickness
Bump Diameter
Bump Height
••
135
20
••
••
Scribe Line Width
••
40
••
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2006.04.25
Page 1 of 1
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