16 Mbit / 32 Mbit / 64 Mbit Multi-Purpose Flash Plus
SST39VF1601 / SST39VF3201 / SST39VF6401
SST39VF1602 / SST39VF3202 / SST39VF6402
Preliminary Specifications
TABLE 12: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V1
Limits
Symbol Parameter
Min
Max
Units
Test Conditions
IDD
Power Supply Current
Address input=VILT/VIHT2, at f=5 MHz,
VDD=VDD Max
Read3
18
35
20
20
mA
mA
µA
CE#=VIL, OE#=WE#=VIH, all I/Os open
CE#=WE#=VIL, OE#=VIH
Program and Erase
Standby VDD Current
Auto Low Power
ISB
CE#=VIHC, VDD=VDD Max
IALP
µA
CE#=VILC, VDD=VDD Max
All inputs=VSS or VDD, WE#=VIHC
ILI
Input Leakage Current
1
µA
µA
VIN=GND to VDD, VDD=VDD Max
ILIW
Input Leakage Current
on WP# pin and RST#
10
WP#=GND to VDD or RST#=GND to VDD
ILO
Output Leakage Current
Input Low Voltage
10
0.8
0.3
µA
V
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VIL
VILC
VIH
Input Low Voltage (CMOS)
Input High Voltage
V
VDD=VDD Max
0.7VDD
V
VDD=VDD Max
VIHC
VOL
VOH
Input High Voltage (CMOS)
Output Low Voltage
VDD-0.3
V
VDD=VDD Max
0.2
V
IOL=100 µA, VDD=VDD Min
Output High Voltage
VDD-0.2
V
IOH=-100 µA, VDD=VDD Min
T12.8 1223
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and VDD = 3V. Not 100% tested.
2. See Figure 17
3. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Typical VDD is 3V.
TABLE 13: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
100
Units
µs
1
TPU-READ
Power-up to Read Operation
Power-up to Program/Erase Operation
1
TPU-WRITE
100
µs
T13.0 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 14: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
VI/O = 0V
Maximum
1
CI/O
I/O Pin Capacitance
Input Capacitance
12 pF
6 pF
1
CIN
VIN = 0V
T14.0 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 15: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
Units
Cycles
Years
mA
Test Method
1,2
NEND
10,000
100
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
1
TDR
1
ILTH
100 + IDD
T15.2 1223
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2003 Silicon Storage Technology, Inc.
S71223-03-000
11/03
13
SILICON [ SILICON ]
