Si1000/1/2/3/4/5
Table 4.3. Port I/O DC Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameters
Conditions
Min
Typ
Max
Units
Output High Voltage High Drive Strength, PnDRV.n = 1
IOH = –3 mA, Port I/O push-pull
V
V
V
– 0.7
– 0.1
—
—
—
—
DD
DD
IOH = –10 µA, Port I/O push-pull
IOH = –10 mA, Port I/O push-pull
See Chart
Low Drive Strength, PnDRV.n = 0
IOH = –1 mA, Port I/O push-pull
IOH = –10 µA, Port I/O push-pull
IOH = –3 mA, Port I/O push-pull
V
V
– 0.7
– 0.1
—
—
—
—
—
—
DD
DD
See Chart
Output Low Voltage High Drive Strength, PnDRV.n = 1
V
I
I
I
= 8.5 mA
= 10 µA
= 25 mA
—
—
—
—
—
0.6
0.1
—
OL
OL
OL
See Chart
Low Drive Strength, PnDRV.n = 0
I
I
I
= 1.4 mA
= 10 µA
= 4 mA
—
—
—
—
—
0.6
0.1
—
OL
OL
OL
See Chart
Input High Voltage
Input Low Voltage
V
V
V
V
= 2.0 to 3.6 V
= 0.9 to 2.0 V
= 2.0 to 3.6 V
= 0.9 to 2.0 V
V
– 0.6
DD
—
—
—
—
—
—
V
V
DD
DD
DD
DD
0.7 x VDD
—
—
0.6
V
0.3 x VDD
V
Input Leakage
Current
Weak Pullup On, V = 0 V, V = 1.8 V
—
—
4
20
—
30
µA
IN
DD
Weak Pullup On, Vin = 0 V, V = 3.6 V
DD
Rev. 1.0
51
SILICON [ SILICON ]
