Si1000/1/2/3/4/5
Table 4.5. Power Management Electrical Specifications
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
2
Typ
—
Max
3
Units
SYSCLKs
ns
Idle Mode Wake-up Time
Suspend Mode Wake-up Time
Low power oscillator
Precision oscillator
—
400
—
—
—
—
1.3
2
—
—
—
µs
µs
µs
Two-cell mode
One-cell mode
Sleep Mode Wake-up Time
10
Table 4.6. Flash Electrical Characteristics
VDD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Flash Size
Conditions
Si1000/2/4
Si1001/3/5
Min
Typ
Max
Units
bytes
bytes
bytes
65536*
32768
1024
1k
—
—
—
—
Scratchpad Size
Endurance
—
1024
—
30k
Erase/Write
Cycles
Erase Cycle Time
Write Cycle Time
28
57
32
64
36
71
ms
µs
Note: 1024 bytes at addresses 0xFC00 to 0xFFFF are reserved.
58
Rev. 1.0
SILICON [ SILICON ]
