C8051F336/7/8/9
Table 6.6. Internal High-Frequency Oscillator Electrical Characteristics
V
= 2.7 to 3.6 V; T = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
A
DD
Parameter
Conditions
IFCN = 11b
Min
Typ
Max
Units
Oscillator Frequency
24
24.5
25
MHz
Oscillator Supply Current
25 °C, V = 3.0 V,
—
450
600
µA
DD
(from V
)
OSCICN.7 = 1,
OCSICN.5 = 0
DD
Power Supply Sensitivity
Temperature Sensitivity
Constant Temperature
Constant Supply
—
—
0.12
60
—
—
%/V
ppm/°C
Table 6.7. Internal Low-Frequency Oscillator Electrical Characteristics
V
= 2.7 to 3.6 V; T = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
A
DD
Parameter
Conditions
OSCLD = 11b
Min
Typ
Max
Units
Oscillator Frequency
72
80
88
kHz
Oscillator Supply Current
25 °C, V = 3.0 V,
—
5.5
10
µA
DD
(from V
)
OSCLCN.7 = 1
DD
Power Supply Sensitivity
Temperature Sensitivity
Constant Temperature
—
—
2.4
30
—
—
%/V
Constant Supply
ppm/°C
38
Rev. 0.2
SILICON [ SILICON ]
