C8051F336/7/8/9
Table 6.2. Global Electrical Characteristics (Continued)
–40 to +85 °C, 25 MHz system clock unless otherwise specified.
Parameter
Conditions
Min
—
Typ
TBD
TBD
TBD
Max
—
Units
%/V
I
I
Supply Sensitivity (Note 3) F = 25 MHz
F = 1 MHz
DD
—
—
%/V
Frequency Sensitivity
V
V
V
V
= 3.0 V, F < 1 MHz, T = 25 °C
= 3.0 V, F > 1 MHz, T = 25 °C
= 3.6 V, F < 1 MHz, T = 25 °C
= 3.6 V, F > 1 MHz, T = 25 °C
—
—
mA/MHz
DD
DD
DD
DD
DD
(Note 3, Note 5)
—
—
—
—
TBD
TBD
TBD
< 0.1
—
—
—
—
mA/MHz
mA/MHz
mA/MHz
µA
Digital Supply Current
(Stop or Suspend Mode, shut-
down)
Oscillator not running,
Monitor Disabled
V
DD
Notes:
1. Given in Table 6.4 on page 37.
2. SYSCLK must be at least 32 kHz to enable debugging.
3. Based on device characterization data; Not production tested.
4. IDD can be estimated for frequencies <= 15 MHz by simply multiplying the frequency of interest by the
frequency sensitivity number for that range. When using these numbers to estimate I for >15 MHz, the
DD
estimate should be the current at 25 MHz minus the difference in current indicated by the frequency
sensitivity number. For example: V = 3.0 V; F = 20 MHz, I = 7.8 mA - (25 MHz -
DD
DD
20 MHz) * 0.21 mA/MHz = 6.75 mA.
5. Idle IDD can be estimated for frequencies <= 1 MHz by simply multiplying the frequency of interest by the
frequency sensitivity number for that range. When using these numbers to estimate Idle I for >1 MHz, the
DD
estimate should be the current at 25 MHz minus the difference in current indicated by the frequency
sensitivity number. For example: V = 3.0 V; F = 5 MHz, Idle I = 4.8 mA - (25 MHz -
DD
DD
5 MHz) * 0.15 mA/MHz = 1.8 mA.
Table 6.3. Port I/O DC Electrical Characteristics
V
= 2.7 to 3.6 V, –40 to +85 °C unless otherwise specified.
DD
Parameters
Conditions
= –3 mA, Port I/O push-pull
Min
Typ
Max
—
Units
I
I
V
– 0.7
—
OH
DD
—
= –10 µA, Port I/O push-pull
Output High Voltage
Output Low Voltage
V
– 0.1
—
V
OH
DD
V – 0.8
DD
—
I
I
= –10 mA, Port I/O push-pull
= 8.5 mA
—
OH
OL
—
—
—
—
—
0.6
0.1
—
I
= 10 µA
= 25 mA
V
OL
OL
1.0
I
Input High Voltage
Input Low Voltage
2.0
—
—
—
—
—
0.8
±1
V
V
Weak Pullup Off
—
Input Leakage
Current
µA
Weak Pullup On, V = 0 V
—
50
100
IN
36
Rev. 0.2
SILICON [ SILICON ]
