BATTERY PROTECTION IC FOR SINGLE-CELL PACK
S-8261 Series
Rev.1.9_00
Table 1 (2 / 2)
Overcharge
detection delay time
1.2 s
Overdischarge
detection delay time
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
115 ms
144 ms
36 ms
Overcurrent 1
detection delay time
9 ms
Model No.
S-8261AAGMD-G2G-T2
S-8261AAHMD-G2H-T2
S-8261AAJBD-G2J-TF
S-8261AAJMD-G2J-T2
S-8261AALMD-G2L-T2
S-8261AAMMD-G2M-T2
S-8261AANMD-G2N-T2
S-8261AAOMD-G2O-T2
S-8261AAPMD-G2P-T2
S-8261AARBD-G2R-TF
S-8261AARMD-G2R-T2
S-8261AASMD-G2S-T2
S-8261AAUMD-G2U-T2
S-8261AAVBD-G2V-TF
S-8261AAXMD-G2X-T2
S-8261AAZMD-G2Z-T2
S-8261ABAMD-G3A-T2
S-8261ABBMD-G3B-T2
S-8261ABCMD-G3C-T2
S-8261ABDBD-G3D-TF
S-8261ABEBD-G3E-TF
S-8261ABGBD-G3G-TF
S-8261ABHBD-G3H-TF
S-8261ABIBD-G3I-TF
S-8261ABJMD-G3J-T2
S-8261ABKMD-G3K-T2
S-8261ABLBD-G3L-TF
S-8261ABMMD-G3M-T2
S-8261ABNMD-G3N-T2
S-8261ABOBD-G3O-TF
S-8261ABPMD-G3P-T2
S-8261ABRMD-G3R-T2
S-8261ABSMD-G3S-T2
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
4.5 ms
9 ms
4.6 s
4.6 s
9 ms
4.6 s
9 ms
1.2 s
9 ms
4.6 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.84 s
1.2 s
7.2 ms
9 ms
1.2 s
9 ms
0.3 s
36 ms
18 ms
9 ms
1.2 s
36 ms
1.2 s
144 ms
144 ms
36 ms
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
144 ms
144 ms
144 ms
144 ms
144 ms
144 ms
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
1.2 s
9 ms
Remark It is possible to change the detection voltages of the product other than above. The delay times
can also be changed within the range listed bellow. For details, please contact SII marketing
department.
Delay time
Symbol
tCU
Selection range
1.2 s
Remarks
Overcharge detection delay time
Overdischarge detection delay time
Overcurrent 1 detection delay time
0.15 s
36 ms
4.5 ms
4.6 s
Choose from the left.
tDL
144 ms 290 ms Choose from the left.
tlOV1
9 ms
18 ms
Choose from the left.
Remark The values surrounded by bold lines are the delay time of the standard products.
6
Seiko Instruments Inc.