ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.3.2_00
2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16
(Ta=25°C unless otherwise specified)
Test
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
circuit
1
−VDET(S) −VDET(S) −VDET(S)
Detection voltage*1
Release voltage
−VDET
+VDET
V
×0.98
S-80808 0.802
S-80809 0.910
S-80810 1.017
S-80811 1.125
S-80812 1.232
S-80813 1.340
S-80814 1.448
S-80808 0.018
S-80809 0.028
S-80810 0.037
S-80811 0.047
S-80812 0.056
S-80813 0.066
S-80814 0.076
×1.02
0.867
0.979
1.091
1.203
1.315
1.427
1.538
0.051
0.061
0.071
0.081
0.091
0.101
0.110
3.5
0.834
0.944
1.054
1.164
1.273
1.383
1.493
0.034
0.044
0.054
0.064
0.073
0.083
0.093
1.3
Hysteresis width
VHYS
Current consumption
ISS
S-80808 to 09
S-80810 to 14
2
VDD=1.5 V
VDD=2.0 V
µA
1.3
3.5
Operating voltage
Output current
VDD
IOUT
0.65
5.0
V
1
3
Output transistor,
Nch, VDS=0.5 V, VDD=0.7 V
Output transistor,
Pch, VDS=2.1 V, VDD=4.5 V
0.04
0.2
mA
2.9
5.8
4
1
Response time
Detection voltage
temperature
tPLH
60
µs
∆ − VDET
∆Ta • −VDET
Ta=−40 °C to +85 °C
100
350 ppm/°C
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
∆ − VDET
∆Ta
∆ − VDET
∆Ta • −VDET
*2
[
mV/°C *1
]
= −VDET(S)
(
Typ.
)
[
V
]
×
[
ppm/°C *3
÷1000
]
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
16
Seiko Instruments Inc.