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S-80840CLNB-B6Z-T2 参数 Datasheet PDF下载

S-80840CLNB-B6Z-T2图片预览
型号: S-80840CLNB-B6Z-T2
PDF下载: 下载PDF文件 查看货源
内容描述: 超小型高精度电压检测器 [ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR]
分类和应用:
文件页数/大小: 54 页 / 671 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR  
S-808xxC Series  
Rev.3.2_00  
2. S-80844KLUA-D2A-T2, S-80844KLY-x  
Table 19  
Condition  
(Ta=25°C unless otherwise specified)  
Test  
Item  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
circuit  
1
Detection voltage*1  
Release voltage  
Current consumption  
Operating voltage  
Output current  
4.295 4.450*2 4.605  
VDET  
+VDET  
ISS  
VDD  
IOUT  
4.700  
3.0  
10.0  
1.0  
0.50  
3.70  
2
1
3
VDD=6.0 V  
µA  
V
mA  
0.95  
0.23  
1.60  
Output transistor,  
VDD=1.2 V  
VDD=2.4 V  
Nch, VDS=0.5 V  
Output transistor,  
Pch, VDS=0.5 V  
0.36  
0.62  
4
1
VDD=4.8 V  
Response time  
Detection voltage  
temperature  
tPLH  
60  
µs  
∆ − VDET  
Ta • −VDET  
Ta=−40°C to 85°C  
100  
350 ppm/°C  
coefficient*3  
*1. VDET: Actual detection voltage value  
*2. Specified detection voltage value (VDET(S)  
)
*3. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.  
∆ − VDET  
Ta  
∆ − VDET  
Ta VDET  
*2  
[
mV/°C *1  
]
= −VDET(S)  
(
Typ.  
)
[
V
]
×
[
ppm/°C *3  
÷1000  
]
*1. Temperature change ratio of the detection voltage  
*2. Specified detection voltage  
*3. Detection voltage temperature coefficient  
Seiko Instruments Inc.  
25  
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