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S-1002NB10I-M5T1U 参数 Datasheet PDF下载

S-1002NB10I-M5T1U图片预览
型号: S-1002NB10I-M5T1U
PDF下载: 下载PDF文件 查看货源
内容描述: [VOLTAGE DETECTOR WITH SENSE PIN]
分类和应用:
文件页数/大小: 39 页 / 3760 K
品牌: SII [ SEIKO INSTRUMENTS INC ]
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VOLTAGE DETECTOR WITH SENSE PIN  
S-1002 Series  
Rev.1.1_02  
Electrical Characteristics  
1. Nch open-drain output product  
Table 11  
(Ta = +25°C unless otherwise specified)  
Test  
Circuit  
Item  
Symbol  
Condition  
Min.  
Typ.  
Max.  
Unit  
V
VDET(S)  
0.022  
VDET(S)  
× 0.99  
VDET(S)  
+ 0.022  
VDET(S)  
× 1.01  
1.0 V ≤ −VDET(S) < 2.2 V  
VDET(S)  
1
Detection voltage*1 VDET  
0.95 V VDD 10.0 V  
2.2 V ≤ −VDET(S) 5.0 V  
VDET(S)  
VDET  
V
1
1
2
VDET  
VDET  
Hysteresis width  
VHYS  
ISS  
V
× 0.03 × 0.05 × 0.07  
Current  
VDD = 10.0 V, VSENSE = VDET(S) + 1.0 V  
0.50  
0.90  
μA  
consumption*2  
Operation voltage VDD  
V
0.95  
0.59  
0.73  
1.47  
1.86  
10.0  
V
1
3
3
3
3
DD = 0.95 V  
1.00  
1.33  
2.39  
2.50  
mA  
mA  
mA  
mA  
Output transistor  
Nch  
VDD = 1.2 V  
VDD = 2.4 V  
VDD = 4.8 V  
Output current  
IOUT  
VDS*3 = 0.5 V  
VSENSE = 0.0 V  
Output transistor  
Nch  
Leakage current  
ILEAK  
0.08  
μA  
3
VDD = 10.0 V, VDS*3 = 10.0 V, VSENSE = 10.0 V  
Detection voltage  
temperature  
coefficient*4  
Detection  
Δ−VDET  
ΔTa • −VDET  
1
4
ppm/°C  
μs  
Ta = 40°C to +85°C  
100  
40  
350  
tDET  
VDD = 5.0 V  
delay time*5  
Release  
VDET(S) 2.4 V  
VDD = 5.0 V  
5.0  
40  
80  
42.0  
μs  
μs  
MΩ  
MΩ  
4
4
2
2
tRESET  
delay time*6  
2.4 V < −VDET(S)  
1.0 V ≤ −VDET(S) < 1.2 V  
1.2 V ≤ −VDET(S) 5.0 V  
19.0  
30.0  
SENSE pin  
resistance  
RSENSE  
6.0  
98.0  
*1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage  
range in Table 3 or Table 4)  
*2. The current flowing through the SENSE pin resistance is not included.  
*3.  
VDS: Drain-to-source voltage of the output transistor  
*4. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.  
Δ−VDET  
ΔTa  
Δ−VDET  
ΔTa • −VDET  
*2  
mV/°C *1 = VDET(S) (typ.) V  
×
ppm/°C *3 ÷ 1000  
[ ]  
[
]
[ ]  
*1. Temperature change of the detection voltage  
*2. Set detection voltage  
*3. Detection voltage temperature coefficient  
*5. The time period from when the pulse voltage of 6.0 V → −VDET(S) 2.0 V or 0 V is applied to the SENSE pin to when  
VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 kΩ.  
*6. The time period from when the pulse voltage of 0 V → −VDET(S) + 2.0 V or 6.0 V is applied to the SENSE pin to when  
VOUT reaches VDD / 2, after the output pin is pulled up to 5.0 V by the resistance of 470 kΩ.  
10