SE2582L
RangeCharger™ 2.4 GHz Power Amplifier with Power Detector
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may
cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the
recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this
device should be at ESD protected workstations.
Symbol
V
CC
V
EN
RF
IN
T
STG
T
j
Definition
Supply Voltage on pin V
CC
Power Amplifier Enable
RF Input Power, RF
OUT
terminated in 50Ω match
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-
-40
-
Max.
4
4
10
150
150
Unit
V
V
dBm
°C
°C
Recommended Operating Conditions
Symbol
V
CC
T
A
Supply Voltage
Ambient Temperature
Parameter
Min.
2.9
-10
Max.
3.6
85
Unit
V
°C
DC Electrical Characteristics
Conditions: V
CC
= V
EN
= 3.3 V, T
A
= 25 °C, as measured on SiGe Semiconductor’s SE2582L-EV1 evaluation board,
unless otherwise noted.
Symbol
I
CC-802.11b
I
CC-802.11g
I
QC
I
OFF
V
ENH
V
ENL
Parameter
Supply Current
Supply Current
Quiescent Current
Supply Current
Logic High Voltage
Logic Low Voltage
Conditions
P
OUT
= 20 dBm, 11 Mbps CCK
signal, BT = 0.45,
P
OUT
= 17.5 dBm, 54 Mbps OFDM
signal, 64 QAM
No RF
V
EN
= 0 V, No RF
-
-
Min.
-
-
-
-
1.3
0
Typ.
134
105
48
0.5
-
-
Max.
-
-
-
10
V
CC
0.5
Unit
mA
mA
mA
μA
V
V
212-DST-01
Rev 1.2
Mar-27-2007
Confidential
QA032707
3 of 8
SIGE [ SIGE SEMICONDUCTOR, INC. ]
