SE2520L
RangeCharger™ 2.4GHz Power Amplifier IC
Final
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device
should be at ESD protected workstations.
Symbol
V
CC
V
CTL
V
EN
IN
T
STG
T
j
Parameter
Supply Voltage (V
CC0
, V
CC1
, V
CC2
)
Control Voltage
Power Amplifier Enable
RF Input Power
Storage Temperature Range
Maximum Junction Temperature
-40
Min.
-0.3
-0.3
-0.3
Max.
+3.6
V
CC
V
CC
+8
+150
+150
Unit
V
V
V
dBm
°C
°C
Recommended Operating Conditions
Symbol
T
A
V
CC
Parameter
Operating Temperature
Supply Voltage
Min.
-40
2.7
3.3
Typ.
Max.
+85
3.6
Unit
°C
V
DC Electrical Characteristics
Conditions: V
CC0
= V
CC1
= V
CC2
= V
EN
= 3.3V, V
CTL
= 1.6V, P
IN
= -8dBm, T
A
= 25°C, f = 2.45GHz, using SiGe
SE2520L-EV1 Evaluation Board.
Symbol
I
CC
I
CC(sat)
∆Icc
TEMP
V
CTL
I
CTL
V
EN
I
STBY
Parameter
Supply Current, V
CTL
= 1.6V, P
IN
= -8dBm
Supply Current (sat) @ P
IN
= 2dBm
Supply Current variation over temperature from
T
A
= 25°C
(-40°C < T
A
< +85°C)
PA Output Power Control Voltage Range
Current Sunk by V
CTL
Pin
Logic High Voltage
Logic Low Voltage
Leakage Current when V
EN
= 0V, V
CTL
= 0V
0.1
2.0
0.8
200
0.1
60
1.6
100
V
µA
V
V
µA
Min.
Typ.
110
140
25
Max.
130
175
Unit
mA
mA
%
15-DST-01
Rev 4.8
Oct 28/02
3 of 8
SIGE [ SIGE SEMICONDUCTOR, INC. ]
