SE2425U
RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
Parameter
Min.
Max.
Unit
V
CC
EN
Supply Voltage
Enable Voltage
RF Input Power
-0.3
-0.3
-
+4.2
VCC
0
V
V
V
IN
dBm
°C
T
C
Case Temperature Range
-40
-40
-
+85
+150
+150
T
STG
Storage Temperature Range
Maximum Junction Temperature
°C
T
j
°C
DC Electrical Characteristics
Conditions:
V
CC0 = VCC1 = VCC2 = VCC3 = 3.3 V, T
C
= 25 °C, f = 2.45 GHz, as measured on SiGe Semiconductor’s
SE2425U-EV1 evaluation board unless otherwise noted.
Symbol
Parameter Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
2.7
3.3
110
28
81
123
-
3.6
-
V
Supply Current VMODE = Low, POUT = 20 dBm
Supply Current VMODE = Low, No RF
Supply Current VMODE = High, No RF
Supply Current VMODE = High, POUT = 19.5 dBm
Current sunk by EN pin (logic high)
Current sunk by MODE pin (logic high)
Logic High Voltage
-
-
mA
mA
mA
mA
µA
µA
V
-
ICC
-
-
-
-
IEN
-
1
IMODE
-
-
1
2.0
0
-
2.8
-
3.3
0.8
10
V
LOGIC
Logic Low Voltage
V
Istdby
Leakage Current when VEN = VMODE = 0 V, No RF
1
µA
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
3 of 10
QA040506
SIGE [ SIGE SEMICONDUCTOR, INC. ]
