SE2425U
RangeCharger
TM
2.4 GHz Bluetooth Power Amplifier IC
Preliminary Information
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
V
CC
V
EN
IN
T
C
T
STG
T
j
Supply Voltage
Enable Voltage
RF Input Power
Parameter
Min.
-0.3
-0.3
-
-40
-40
-
Max.
+4.2
V
CC
0
+85
+150
+150
Unit
V
V
dBm
°C
°C
°C
Case Temperature Range
Storage Temperature Range
Maximum Junction Temperature
DC Electrical Characteristics
Conditions:
Symbol
V
CC
Supply Voltage
Supply Current V
MODE
= Low, P
OUT
= 20 dBm
I
CC
Supply Current V
MODE
= Low, No RF
Supply Current V
MODE
= High, No RF
Supply Current V
MODE
= High, P
OUT
= 19.5 dBm
I
EN
I
MODE
V
LOGIC
I
stdby
Current sunk by EN pin (logic high)
Current sunk by MODE pin (logic high)
Logic High Voltage
Logic Low Voltage
Leakage Current when V
EN
= V
MODE
= 0 V, No RF
V
CC0
= V
CC1
= V
CC2
= V
CC3
= 3.3 V, T
C
= 25
°C,
f = 2.45 GHz, as measured on SiGe Semiconductor’s
SE2425U-EV1 evaluation board unless otherwise noted.
Parameter
Min.
2.7
-
-
-
-
-
-
2.0
0
-
Typ.
3.3
110
28
81
123
-
-
2.8
-
1
Max.
3.6
-
-
-
-
1
1
3.3
0.8
10
Unit
V
mA
mA
mA
mA
µA
µA
V
V
µA
165-DST-01
Rev 1.3
Apr-05-2006
Confidential
QA040506
3 of 10
SIGE [ SIGE SEMICONDUCTOR, INC. ]
