PA2423MB
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Production Information
Absolute Maximum Ratings
Symbol
V
CC
V
CTL
V
RAMP
IN
Parameter
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Min.
-0.3
-0.3
-0.3
Max.
+3.6
Unit
V
V
V
dBm
°C
°C
°C
V
CC
V
CC
+8
T
A
T
STG
T
j
-40
-40
+85
+150
+150
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This
device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling
and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Conditions: V
CC0
= V
CC1
= V
CC2
= V
RAMP
= 3.3V, V
CTL
= 3.3V, P
IN
= +2dBm,T
A
=25°C, f = 2.45GHz,
Input and Output externally matched to 50Ω
,unless
otherwise noted.
Symbol
V
CC
I
CC
Note
Supply Voltage
1
3
Parameter
Min.
3
Typ.
3.3
125
25
Max.
3.6
150
Unit
V
mA
%
Supply Current (I
CC
= I
VCC0
+ I
VCC1
+I
VCC2
), V
CTL
= 3.3V
Supply Current variation over temperature from T
A
= 25°C
(-40°C <T
A
<+85°C)
PA Output Power Control Voltage Range
0
∆
ICC
temp
V
CTL
I
CTL
V
RAMP
I
stby
V
CC
200
250
V
µA
V
1
3
3
1
Current sourced by V
CTL
Pin
Logic High Voltage
Logic Low Voltage
Leakage Current when V
ramp
= 0V, V
ctl
= high
2.0
0.8
0.5
10
V
µA
DOC# 05PDS001
Rev 9
07/26/2001
Page 3 of 10
SIGE [ SIGE SEMICONDUCTOR, INC. ]
