PA2423U
RangeCharger
TM
2.4 GHz Bluetooth
tm
Power Amplifier IC
Preliminary
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
V
CC
V
CTL
V
RAMP
IN
T
A
T
STG
T
j
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
Parameter
Min.
-0.3
-0.3
-0.3
-
-40
-40
-
Max.
+3.6
V
CC
V
CC
+8
+85
+150
+150
Unit
V
V
V
dBm
°C
°C
°C
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
DC Electrical Characteristics
Conditions:
Symbol
V
CC
I
CC
Supply Voltage
Supply Current (I
CC
= I
VCC0
+ I
VCC1
+ I
VCC2
),
V
CTL
= 3.3 V, P
OUT_MAX
≤
22.5 dBm
Supply Current variation over temperature
from T
A
= 25
°C
(-40
°C
< T
A
< +85
°C)
PA Output Power Control Voltage Range
Current sunk by V
CTL
pin
Logic High Voltage
Logic Low Voltage
Leakage Current when V
RAMP
= 0 V, No RF,
V
CTL
= high
V
CC0
= V
CC1
= V
CC2
= V
RAMP
= V
CTL
= 3.3 V, P
IN
= 0 dBm, T
A
= 25
°C,
f = 2.45 GHz, input and output
externally matched to 50Ω unless otherwise noted.
Parameter
Min.
2.7
-
Typ.
3.3
135
Max.
3.6
160
Unit
V
mA
∆Icc
TEMP
V
CTL
I
CTL
V
RAMP
I
stdby
-
0
-
2.0
-
-
25
-
200
-
-
0.5
-
V
CC
250
-
0.8
10
%
V
µA
V
V
µA
131-DST-01
Rev 1.1
Apr-18-2006
Confidential
QA041806
3 of 10
SIGE [ SIGE SEMICONDUCTOR, INC. ]
