PA2423U
RangeChargerTM 2.4 GHz Bluetoothtm Power Amplifier IC
Preliminary
Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is
ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
Control Voltage
Ramping Voltage
RF Input Power
-0.3
-0.3
-0.3
-
+3.6
VCC
V
V
V
CTL
V
RAMP
VCC
V
IN
+8
dBm
°C
°C
°C
T
A
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
-40
-40
-
+85
+150
+150
T
STG
T
j
DC Electrical Characteristics
Conditions:
V
CC0 = VCC1 = VCC2 = VRAMP = VCTL = 3.3 V, PIN = 0 dBm, T = 25 °C, f = 2.45 GHz, input and output
A
externally matched to 50Ω unless otherwise noted.
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
2.7
3.3
3.6
V
Supply Current (ICC = IVCC0 + IVCC1 + IVCC2),
ICC
-
-
135
25
160
-
mA
%
V
CTL = 3.3 V, POUT_MAX ≤ 22.5 dBm
Supply Current variation over temperature
from T = 25 °C
(-40 °C < T < +85 °C)
∆IccTEMP
A
A
V
CTL
PA Output Power Control Voltage Range
Current sunk by VCTL pin
0
-
-
V
CC
V
µA
V
ICTL
200
250
-
Logic High Voltage
2.0
-
-
-
V
RAMP
Logic Low Voltage
0.8
V
Leakage Current when VRAMP = 0 V, No RF,
Istdby
-
0.5
10
µA
V
CTL = high
131-DST-01 Rev 1.1 Apr-18-2006
Confidential
3 of 10
QA041806
SIGE [ SIGE SEMICONDUCTOR, INC. ]
