SAE 800
Characteristics
T = – 25 to 125˚C; VS = 2.8 to 18 V
j
Parameter
Symbol
Limit Values
Unit
Test
Condition
min.
typ.
max.
Supply Section
Standby current
Quiescent current; pin L open
ISt
IQu
1
5
10
10
µA
mA
Output Section
Peak output power (tone 3)
VS = 2.8 V; RQ = 4 Ω; RL = 8.2 kΩ PQ
250
125
450
225
450
330
165
600
300
600
mW
mW
mW
mW
mW
VS = 2.8 V; RQ = 8 Ω; RL = 18 kΩ
VS = 5.0 V; RQ = 8 Ω; RL = 10 kΩ
PQ
PQ
A
VS = 5.0 V; RQ = 16 Ω; RL = 18 kΩ PQ
VS = 12 V; RQ = 50 Ω; RL = 33 kΩ PQ
Output level differences:
tone 1 to 3
tone 2 to 3
1)
a13
a23
– 1
– 1
1
1
dB
dB
A
A
2)
Biasing Section
Voltage at pin ROSC ; RR = 10 kΩ
Voltage at pin L; RL = 10 kΩ
VR
VL
1.2
1.2
V
V
Oscillator Section
Amplitude
∆VC
0.5
V
Frequency RR = 10 kΩ;
CC = 4.7 nF
Oscill. drift vs. temperature
f0
13.2
kHz
-4
DT
DV
– 3
+ 3
10 /K
-3
Oscill. drift vs. supply voltage
1
10 /K
Input Section
Triggering voltage at E1, E2
Triggering current at E1, E2
Noise voltage immunity at E1, E2 VE1 , E2
VE1 , E2
IE1 , E2
1.6
100
V
µA
V
0.3
10
Triggering delay at f0 = 13.2 kHz
tdT
2
ms
1) a13 = 20 x log (M1 / (0.67 x M3))
2) a23 = 20 x log (M2 / (0.89 x M3))
Semiconductor Group
9
SIEMENS [ Siemens Semiconductor Group ]
