SAE 800
Characteristics
T
j
= – 25 to 125˚C;
V
S
= 2.8 to 18 V
Parameter
Symbol
min.
Supply Section
Standby current
Quiescent current; pin L open
Output Section
Peak output power (tone 3)
V
S
= 2.8 V;
R
Q
= 4
Ω;
R
L
= 8.2 kΩ
V
S
= 2.8 V;
R
Q
= 8
Ω;
R
L
= 18 kΩ
V
S
= 5.0 V;
R
Q
= 8
Ω;
R
L
= 10 kΩ
V
S
= 5.0 V;
R
Q
= 16
Ω;
R
L
= 18 kΩ
V
S
= 12 V;
R
Q
= 50
Ω;
R
L
= 33 kΩ
Output level differences:
tone 1 to 3
tone 2 to 3
Biasing Section
Voltage at pin
R
OSC
;
R
R
= 10 kΩ
Voltage at pin L;
R
L
= 10 kΩ
Oscillator Section
Amplitude
Frequency
R
R
= 10 kΩ;
C
C
= 4.7 nF
Oscill. drift vs. temperature
Oscill. drift vs. supply voltage
Input Section
Triggering voltage at E1, E2
Triggering current at E1, E2
Noise voltage immunity at E1, E2
Triggering delay at
f
0
= 13.2 kHz
1)
2)
Limit Values
typ.
max.
Unit
Test
Condition
I
St
I
Qu
1
5
10
10
µA
mA
P
Q
P
Q
P
Q
P
Q
P
Q
a
13
a
23
250
125
450
225
450
–1
–1
330
165
600
300
600
1
1
mW
mW
mW
mW
mW
dB
dB
A
A
1)
A
2)
V
R
V
L
1.2
1.2
V
V
∆
V
C
f
0
D
T
D
V
–3
0.5
13.2
+3
1
V
kHz
10
-4
/K
10
-3
/K
V
E1 , E2
I
E1 , E2
V
E1 , E2
t
dT
1.6
100
2
0.3
10
V
µA
V
ms
a
13
= 20 x log (M1 / (0.67 x M3))
a
23
= 20 x log (M2 / (0.89 x M3))
Semiconductor Group
9
SIEMENS [ Siemens Semiconductor Group ]
