BC 807
BC 808
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA
BC 807
BC 808
Collector-base breakdown voltage
I
C
= 100
µ
A
BC 807
BC 808
Emitter-base breakdown voltage,
I
E
= 10
µ
A
Collector cutoff current
V
CB
= 25 V
V
CB
= 25 V,
T
A
= 150 ˚C
Emitter cutoff current,
V
EB
= 4 V
DC current gain
1)
I
C
= 100 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
I
C
= 300 mA;
V
CE
= 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
Collector-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
Base-emitter saturation voltage
1)
I
C
= 500 mA;
I
B
= 50 mA
AC characteristics
Transition frequency
I
C
= 50 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
1)
Values
typ.
max.
Unit
V
(BR)CE0
45
25
V
(BR)CB0
50
30
V
(BR)EB0
I
CB0
–
–
I
EB0
h
FE
100
160
250
60
100
170
V
CEsat
V
BEsat
–
–
160
250
350
–
–
–
–
–
250
400
630
–
–
–
0.7
2
–
–
–
–
100
50
100
5
–
–
–
–
–
–
–
–
–
–
V
nA
µ
A
nA
–
V
f
T
C
obo
C
ibo
–
–
–
200
10
60
–
–
–
MHz
pF
Pulse test:
t
≤
300
µ
s,
D
≤
2 %.
Semiconductor Group
3
SIEMENS [ Siemens Semiconductor Group ]
