(
)
Absolute Maximum Ratings Ta=25
Item
Symbol
VIN
Rating
Unit
V
Line voltage
32
32
1.5
2
Output MOS input voltage
VDD
V
(
)
Output current A V E
IOUTave
IOUTpeak
Tstg
A
(
)
Output current P E A K
Storage temperature
Junction temperature
A
40
~
150
Tj
150
Recommended Operation Conditions
Item
Recommerded Value
Unit
V
Input voltage
8
10~
~
30
Operation temperature
80
(
)
Electrical Characteristics Ta=25
Symbol
Vdss
Condition
MIN
32
TYP
140
MAX
Unit
V
Item
HighsideMOS
Drain-source breakdown voltage
ID
=
1mA,VGS
=
0V
0V
HighsideMOS
Drain interruption current
Idss
Ron
VSD
VRM
VF
VDS=
30V,VGS
=
10
250
1.5
HighsideMOS
Drain-source ON resistance
ID
=
1.2A,VGS
=
4V
0V
HighsideMOS
Source-drain Di forward voltage
IS
=
1.2A,VDS
=
V
V
LowSideSBD
Peak reverse voltage
40
LowSideSBD
Forward voltage
IF=
1.2A
0.55
2
V
LowSideSBD
Reverse current
IR
VR
=
VRM
mA
Start voltage
Vcc_start
Vcc_stop
Vcc_hys
Icc
7
7.5
7
8
V
V
Stop voltage
6.5
7.5
Start-stop voltage hysteresis
Current consumption
BOOT terminal voltage
Internal reference voltage
Internal oscillation frequency
Overcurrent threshold voltage
SoftStart terminal current
"H" CHG terminal input voltage
"L" CHG terminal input voltage
Overcurrent protection operating temperature
0.5
8
V
Vcc
Vcc
Vcc
=
=
=
8V
8V
8V
~
~
~
30V
10
7
mA
V
Vboot
Vref
30V
30V
6
6.5
5
4.75
212.5
0.162
20
5.25
287.5
0.218
5
V
fosc
Vcc
Vcc
Vcc
=
=
=
24V
24V
24V
250
0.19
12.5
kHz
V
Vth_OCL
IS/S
VCHGH
VCHGL
4.5
Vref
0.5
V
V
GND
T
_
TSD
150
SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
