ꢀꢁꢂꢃꢀꢀꢁꢂꢃꢂꢄꢅꢆꢃꢇꢈꢅꢇꢄꢉꢊꢇꢂꢋꢃꢂꢌꢈ
オン電圧-オン電流
On-state Voltage vs On-state Current
電力損失曲線
Power Dissipation
１．６
過渡熱抵抗
Transient Thermal Resistance
５
５００
Tj＝１２５℃
Sine w ave
θja
１．４
１．２
１
Conduction angle１８０°
１００
２
θjl
Tl＝１２５℃（TYP）
１０
Tl＝２５℃（TYP）
１
０．８
０．６
０．４
０．２
０
M ounted on P.C.B.
０m m
２
１
０．５
l
０．１
Soldering land３m mφ
l＝２～１５m m
Pulse m easurem ent
０．２
０．０３
０．６ ０．８
１
１．２
１．４
１．６
１．８
２
０
０．２
０．４
０．６
０．８
１
１．２
１．４
０．０0０１０．０
０
１
０．０１
０．１
１
１０
１
０
０
１０００
Instantaneous On-state Voltage VT〔V〕
On-state Current IT（r.m .s.）〔A 〕
Tim e t〔sec.〕
I -Tj特性
H
V
BO -Tj特性
最大リード温度
Holding Current vs Junction Temperature
Breakover Voltage vs Junction Temperature
Max. Lead Temperature
２
１．１
１．４
TYP
Tj＝１
Sine w ave
Conduction angle１８０°
２５℃
Pulse m easurem ent
１．２
１
１．０５
１５.
１
１
０．８
０．６
０．４
０．２
０
０．９５
０．９
０５.
０．８５
TYP
Pulse m easurem ent
Peak hold m ethod
０
０．８
－４０－２
０
０
２０
４０
６０
８０
１
０
０
１
２
０
－４０－２
０
０
２０
４０
６
０
８０
１
０
０
１
２
０
４０
６０
８０
１
０
０
１
２
０
１４０
Junction Tem perature Tj〔℃〕
Junction Tem perature Tj〔℃〕
A llow able Lead Tem perature Tl〔℃〕
サージオン電流
Surge On-state Current（ITSM）
せん頭パルス電流
せん頭パルス電流ディレーティング
Pulse On-state Current Derating（ITRM）
Pulse On-state Current Rating（ITRM）
２５
１
０
０
０
１．２
Current w ave form
Current w ave form
Non repetitive
Sine w ave５０Hz
５
０
０
IP
IP
Conduction angle１８０°
Free in air
Tj＝２５℃
１
０．８
０．６
０
０
to
to
２
０
２
０
０
１/f
１/f
diT/dt lim it line
Ta＝２５℃
Free in air
Sine w ave
Free in air
Sine w ave
１
０
０
１５
５０
f＝１～１２０Hz
f＝１～１
２０Hz
２０
f＝１～５kHz
１０
１
０
０．４
０．２
０
f＝＝１１kkHHzz
f＝＝５５kkHHzz
５
５
０
２
１
１
２
５
１０
２０
５０
１
０
０
１
２
５
１
０
２０
５０
１
０
０
２
０
０
０
２０
４０
６０
８０
１
０
０
１
２
０
１４０
Num ber of Cycles
Pulse Base W idth to〔μs〕
A llow able A m bient Tem perature Ta〔℃〕
最大周囲温度
Maximum Ambient Temperature
０．８
M ounted on P.C.B.
20m m
０．７
０．６
０．５
０．４
０．３
０．２
０．１
０
l
Soldering land３m mφ
l＝２～１５m m
０
２０
４０
６０
８
０
１
０
０
１
２
０
１４０
A llow able A m bient Tem perature Ta〔℃〕
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
