2SK2663 ( F1E90HVX2 )
HVX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
900
V
μA
IDSS
IGSS
gfs
VDS = 900V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 0.5A, VDS = 10V
250
±0.1
0.6
2.5
1.0
10.5
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V
14
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forward Voltage
Thermal Resistance
VTH
VSD
ID = 0.2mA, VDS = 10V
IS = 0.5A, VGS = 0V
θjc junction to case
12.5 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 1A
10.5
230
5
23
10
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 25V, VGS = 0V, f = 1MHZ
pF
ID = 0.5A, VDD = 150V, RL = 300Ω
18
ns
Turn-Off Time
toff
50
85
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
