VX-2 Series Power MOSFET
2SK2563 ( F4F60VX2 )
●Electrical Characteristics Tc = 25℃
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
V(BR)DSS ID = 1mA, VGS = 0V
600
V
μA
IDSS
IGSS
gfs
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 2A, VDS = 10V
250
±0.1
1.5
3.8
1.8
3.0
S
Ω
V
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2A, VGS = 10V
2.2
3.5
1.5
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
VTH
VSD
ID = 1mA, VDS = 10V
2.5
IS = 2A, VGS = 0V
θjc junction to case
4.16 ℃/Ｗ
nC
Total Gate Charge
Qg
Ciss
Crss
Coss
ton
VDD = 400V, VGS = 10V, ID = 4A
21
540
40
120
28
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
VDS = 10V, VGS = 0V, f = 1MHZ
ID = 2A, RL = 75Ω, VGS = 10V
pF
40
ns
Turn-Off Time
toff
110 160
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SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
