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TK4P50D 参数 Datasheet PDF下载

TK4P50D图片预览
型号: TK4P50D
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型(I ?? - 莫萨? | ) [Silicon N Channel MOS Type (π-MOSⅦ)]
分类和应用: 晶体晶体管开关脉冲
文件页数/大小: 5 页 / 335 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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R
DS (ON)
– Tc
6
100
COMMON SOURCE
VGS
=
10 V
PULSE TEST
COMMON SOURCE
Tc
=
25°C
PULSE TEST
I
DR
– V
DS
DRAIN-SOURCE ON-RESISTANCE
R
DS (ON)
(
Ω)
4.8
4
3.6
2
ID
=
1 A
DRAIN REVERSE CURRENT
I
DR
(A)
10
10
5
1
2.4
1.2
3
0
−80
−40
0
40
80
120
160
0.1
0
−0.3
1
−0.6
VGS
=
0 V
−0.9
−1.2
−1.5
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE VOLTAGE
V
DS
(V)
C – V
DS
10000
5
V
th
– Tc
GATE THRESHOLD VOLTAGE
V
th
(V)
(pF)
1000
Ciss
4
C
3
CAPACITANCE
100
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
10
Crss
2
COMMON SOURCE
1 VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−80
1
0.1
100
DRAIN-SOURCE VOLTAGE
V
DS
(V)
−40
0
40
80
120
160
CASE TEMPERATURE
Tc
(°C)
P
D
– Tc
V
DS
(V)
100
500
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
(V)
GATE-SOURCE VOLTAGE
V
GS
20
DRAIN POWER DISSIPATION
P
D
(W)
80
400
VDS
200
VDD
=
100 V
400
16
DRAIN-SOURCE VOLTAGE
60
300
12
40
200
COMMON SOURCE
VGS
100
ID
=
4 A
Tc
=
25°C
PULSE TEST
8
20
4
0
0
40
80
120
160
0
0
4
8
12
0
16
CASE TEMPERATURE
Tc
(°C)
TOTAL GATE CHARGE
Q
g
(nC)
4/5
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