6. Electrical Characteristics
6.1. Static Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
IDSS
VGS = ±20 V, VDS = 0 V
±0.1
µA
Drain cut-off current
VDS = -40 V, VGS = 0 V
-10
Drain-source breakdown voltage
Drain-source breakdown voltage (Note 3)
Gate threshold voltage
V(BR)DSS ID = -10 mA, VGS = 0 V
V(BR)DSX ID = -10 mA, VGS = 10 V
-40
-30
-0.8
37
V
Vth
VDS = -10 V, ID = -0.1 mA
-2.0
48
Drain-source on-resistance
RDS(ON) VGS = -4.5 V, ID = -7.5 A
VGS = -10 V, ID = -7.5 A
mΩ
28
36
Note 3: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Input capacitance
Symbol
Test Condition
Min
Typ.
Max
Unit
pF
Ciss
Crss
Coss
tr
VDS = -10 V, VGS = 0 V, f = 1 MHz
1100
130
170
11
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
See Figure 6.2.1.
ns
ton
19
tf
42
toff
170
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Qg
Test Condition
Min
Typ.
26
Max
Unit
nC
Total gate charge (gate-source plus
gate-drain)
VDD ≈ -32 V, VGS = -10 V, ID = -15 A
Gate-source charge 1
Gate-drain charge
Qgs1
Qgd
6.7
2.5
6.4. Source-Drain Characteristics (T = 25 unless otherwise specified)
a
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse drain current (pulsed)
Diode forward voltage
(Note 4)
IDRP
-45
1.2
A
V
VDSF
IDR = -15 A, VGS = 0 V
Note 4: Ensure that the channel temperature does not exceed 150.
3/8
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