SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State
Drain-Source On-State
Forward
Resistance
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 20 A
Transconductance
V
DS
= 15 V, I
D
= 20 A
15
0.0042
50
0.0026
0.0033
0.0047
0.0053
S
W
20
0.8
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate
Charge
Charge
Gate-Source Charge
Gate-Drain
Rise
Time
Turn-On Delay Time
c
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.2
W
I
D
^
50 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
f = 1.0 MHz
0.5
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
5100
1650
800
1.1
40
14
13
15
11
45
15
25
20
70
25
ns
1.8
60
nC
W
p
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 50 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ms
1.2
45
100
1.5
90
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
160
140
120
I D - Drain Current (A)
100
80
60
40
20
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
3V
I D - Drain Current (A)
V
GS
= 10 thru 5 V
4V
160
140
120
100
80
60
T
C
= 125_C
40
20
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
25_C
- 55_C
Transfer Characteristics
2/5
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