SUD50P08-25L
P-Channel
8
0V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
25 °C unless noted
60
140
120
100
I
D
- Drain Current (A)
40
Package Limited
Power
80
60
40
20
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
50
30
20
10
0
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
100
Power Derating
I
C
- Peak Avalanche Current (A)
10
T
A
=
1
0.000001
L · I
D
BV - V
DD
0.00001
0.0001
0.001
0.01
T
A
- Time In Avalanche (sec)
Single Pulse Avalanche Capability
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
5/7
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