SUD50N03-07
N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
20
16
r
DS(on)
(W)
0.007 @ V
GS
= 10 V
0.010 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N03-07
SUD50N03-07—E3 ( Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
20
14
100
20
136
5
a
−55
to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Symbol
R
thJA
R
thJC
Typical
Maximum
30
Unit
_C/W
0.85
1.1
1/5
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