SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25
_C
UNLESS NOTED)
Transconductance
120
T
C
= –55
_C
25
_C
80
125
_C
r
DS(on)
– On-Resistance (W)
0.0150
On-Resistance vs. Drain Current
100
g fs – Transconductance (S)
0.0125
0.0100
V
GS
= 4.5 V
0.0075
V
GS
= 10 V
0.0050
60
40
20
0.0025
0
0
10
20
30
40
50
0.0000
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
4000
3500
3000
2500
2000
1500
1000
C
rss
500
0
0
5
10
15
20
25
30
C
oss
C
iss
V GS – Gate-to-Source Voltage (V)
8
V
DS
= 15 V
I
D
= 50 A
10
Gate Charge
C – Capacitance (pF)
6
4
2
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 20 A
r
DS(on)
– On-Resistance
(Normalized)
I S – Source Current (A)
1.5
100
Source-Drain Diode Forward Voltage
T
J
= 150
_C
10
T
J
= 25
_C
1.0
0.5
0.0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
3/5
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