SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
V
DS
DV
DS
/T
J
DV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 26 A
V
GS
= 4.5 V, I
D
= 22 A
V
DS
= 15 V, I
D
= 26 A
100
0.007
0.0096
46
0.0086
0.012
S
1.2
25
20
– 6.3
2.4
"100
1
10
mV/_C
V
nA
A
mA
A
W
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 12 V, R
L
= 0.54
W
I
D
^
22 A, V
GEN
= 4.5 V, R
g
= 1
W
V
DD
= 12 V, R
L
= 0.54
W
I
D
^
22 A, V
GEN
= 10 V, R
g
= 1
W
f = 1 MHz
V
DS
= 12 V, V
GS
= 10 V, I
D
= 26 A
V
DS
= 12 V, V
GS
= 4.5 V, I
D
= 26 A
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
2020
485
245
38
18.5
7
6.5
0.9
9
8
20
8
17
15
17
8
1.4
14
12
30
12
26
23
26
12
ns
W
57
28
nC
pF
p
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 6 7 A di/dt = 100 A/ms T
J
= 25_C
6.7 A,
A/ms,
I
S
= 6.7 A
0.9
26
16
12
14
ns
T
C
= 25_C
37
100
1.5
40
24
A
V
ns
nC
2/7
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