SUD45P03-10 参数 Datasheet PDF下载

SUD45P03-10

P-Channel 30-V (D-S), MOSFET

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

V

DS

V

GS(th)

I

GSS

I

DSS

I

D(on)

V

GS

= 0 V, I

D

= - 250 µA

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= - 30 V, V

GS

= 0 V

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 125 °C

V

DS

= - 5 V, V

GS

= - 10 V

V

DS

= - 5 V, V

GS

= - 4.5 V

V

GS

= - 10 V, I

D

= - 15 A

Drain-Source On-State Resistance

a

Forward Transconductance

a

Dynamic

b

Symbol

Test Conditions

Min.

- 30

- 1.0

Typ.

Max.

Unit

- 3.0

± 100

-1

- 50

V

nA

µA

A

- 50

- 20

0.010

0.015

0.018

20

6000

R

DS(on)

g

fs

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

SM

V

SD

t

rr

V

GS

= - 10 V, I

D

= - 15 A, T

J

= 125 °C

V

GS

= - 4.5 V, I

D

= - 15 A

V

DS

= - 15 V, I

D

= - 15 A

Ω

S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

c

Gate-Source Charge

c

Gate-Drain Charge

c

Turn-On Delay Time

c

Rise Time

c

Turn-Off Delay

Fall Time

c

Pulsed Current

Diode Forward Voltage

a

Source-Drain Reverse Recovery Time

Time

c

V

GS

= 0 V, V

DS

= - 25 V, f = 1 MHz

1100

700

90

150

pF

V

DS

= - 15 V, V

GS

= - 10 V, I

D

= - 45 A

20

16

15

25

550

200

250

100

nC

V

DD

= - 15 V, R

L

= 0.33

Ω

I

D

≅

- 45 A, V

GEN

= - 10 V, R

G

= 2.4

Ω

375

100

140

ns

Source-Drain Diode Ratings and Characteristic

T

C

= 25 °C

A

V

ns

I

F

= - 45 A, V

GS

= 0 V

I

F

= - 45 A, dI/dt = 100 A/µs

1.0

55

1.5

100

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

2/7

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